Recent developments in the MOCVD and ALD of rare earth oxides and silicates

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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Byoung Hun Lee, Laegu Kang, R. Nieh et al. · Applied Physics Letters · 2000 · 605 citations

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Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk, Robert M. Wallace · Applied Physics Letters · 1999 · 503 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Low co-ordination numbers in lanthanide and actinide compounds. Part I. The preparation and characterization of tris{bis(trimethylsilyl)-amido}lanthanides

D. C. Bradley, Joginder S. Ghotra, F. A. Hart · Journal of the Chemical Society Dalton Transactions · 1973 · 443 citations

Actinide Compounds, Engineering, Magnetic Resonance +16