Concepedia

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90nm node MOSFETs

H.W. Chen, S.Y. Chen, Kent Chen, Heng‐Sheng Huang, C.H. Liu, Fu‐Chien Chiu, K.W. Liu, Kunsong Lin, C.T. Lin, Guanglei Ma,

Applied Surface Science · 2008 · 14 citations · 6 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDielectricsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsCarrier Transport MechanismsGate Dielectric EngineeringGate DielectricsGate Oxide Thickness EffectsGate OxidesGate Stack EngineeringSilicon Device Materials

References

6

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, W. Wang · IEEE Electron Device Letters · 1997 · 812 citations

Engineering, Electrical Engineering, Microelectronics +16

Interfaces and defects of high-K oxides on silicon

John Robertson · Solid-State Electronics · 2005 · 228 citations

Engineering, Materials Engineering, Materials Science +12

Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

G. Timp, Aditya Agarwal, F.H. Baumann et al. · 2002 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Koyama, A. Kaneko, Tsunehiro Ino et al. · 2003 · 77 citations

Natural Sciences, Materials Science, Physics +17

Charge Trapping at Deep States in Hf–Silicate Based High-κ Gate Dielectrics

N. A. Chowdhury, D. Misra · Journal of The Electrochemical Society · 2007 · 59 citations

Natural Sciences, Materials Science, Physics +17