Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

GaN: Processing, defects, and devices

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High dislocation densities in high efficiency GaN-based light-emitting diodes

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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

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Capillary equilibria of dislocated crystals

F. C. Frank · Acta Crystallographica · 1951 · 622 citations

Natural Sciences, Physics, Condensed Matter Physics +9