Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

G. Masetti, M. Severi, S. Solmi · IEEE Transactions on Electron Devices · 1983 · 956 citations

Engineering, Electrical Engineering, Materials Science +17

Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

M. Y. Tsai, B. G. Streetman · Journal of Applied Physics · 1979 · 174 citations

Engineering, Materials Engineering, Materials Science +17

Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous Si

R. G. Wilson · Journal of Applied Physics · 1983 · 173 citations

Engineering, Materials Engineering, Materials Science +17

Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon

C. Carter, W. Maszara, D. K. Sadana et al. · Applied Physics Letters · 1984 · 104 citations

Engineering, Materials Engineering, Materials Science +17

Channeling in low energy boron ion implantation

A. E. Michel, R. H. Kastl, Sebastian Mäder et al. · Applied Physics Letters · 1984 · 95 citations

Engineering, Electrical Engineering, Electronic Materials +12