R. H. Kastl

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations

Decay Time, Engineering, Silicon On Insulator +16

Channeling in low energy boron ion implantation

A. E. Michel, R. H. Kastl, Sebastian Mäder et al. · Applied Physics Letters · 1984 · 95 citations

Tilt Angle, Ion Implantation, Engineering +11

Distribution of irradiation damage in silicon bombarded with hydrogen

W. K. Chu, R. H. Kastl, R. F. Lever et al. · Physical review. B, Solid state · 1977 · 78 citations

Depth Measurements, Ion Implantation, Engineering +12

The poly-single crystalline silicon interface

C. Y. Wong, A. E. Michel, R. Isaac et al. · Journal of Applied Physics · 1984 · 60 citations

Materials Science, Materials Engineering, Engineering +12

Diffusion of Tin into Silicon

T. H. Yeh, S. M. Hu, R. H. Kastl · Journal of Applied Physics · 1968 · 38 citations

Materials Engineering, Materials Science, Semiconductors +15