R. H. Kastl - Concepedia

Author

R. H. Kastl

IBM (United States)

Also Known As

R. H. Kastl, R. Kastl, R.H. Kastl

Publications

586

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center

About

R. H. Kastl is an author at IBM (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	570
2	Applied Physics	9	9	560
3	Natural Sciences	2	2	97
4	Chemical Engineering	2	2	27
5	Electrical Engineering	2	2	236

R. H. Kastl

Publications

570

Citations

H-Index

Page 1

	Year	Citations
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon A. E. Michel, W. Rausch, Paul Ronsheim, Applied Physics Letters Decay TimeEngineeringSilicon On InsulatorSemiconductor DeviceSemiconductors	1987	211
Channeling in low energy boron ion implantation A. E. Michel, R. H. Kastl, Sebastian Mäder, Applied Physics Letters Tilt AngleIon ImplantationEngineeringCrystalline DefectsPhysics	1984	95
Distribution of irradiation damage in silicon bombarded with hydrogen W. K. Chu, R. H. Kastl, R. F. Lever, Physical review. B, Solid state Depth MeasurementsIon ImplantationEngineeringNuclear PhysicsCrystalline Defects	1977	78
The poly-single crystalline silicon interface C. Y. Wong, A. E. Michel, R. Isaac, Journal of Applied Physics Materials ScienceMaterials EngineeringEngineeringFlexible ElectronicsSurface Science	1984	60
Diffusion of Tin into Silicon T. H. Yeh, S. M. Hu, R. H. Kastl Journal of Applied Physics Materials EngineeringMaterials ScienceSemiconductorsEngineeringDiffusion Resistance	1968	38
Near‐surface damage and contamination of silicon following electron cyclotron resonance etching A. S. Yapsir, G. Fortuño‐Wiltshire, Jeff Gambino, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceElectrical EngineeringPlasma ElectronicsEngineeringElectron Microscopy	1990	25
Low-energy antimony implantation in silicon W. K. Chu, R. H. Kastl, P. C. Murley Radiation Effects Materials ScienceMaterials EngineeringIon ImplantationProjected RangesNuclear Physics	1980	19
Ion-implanted polysilicon diffusion sources A. E. Michel, R. H. Kastl, Sebastian Mäder Nuclear Instruments and Methods in Physics Research Materials ScienceIon ImplantationEngineeringApplied PhysicsSilicon On Insulator	1983	17
Diffusion of boron into polycrystalline silicon from a single crystal source W. Rausch, R. F. Lever, R. H. Kastl Journal of Applied Physics Materials ScienceChemical EngineeringBoron NitrideEngineeringBoron Ions	1983	17
Impact of Deionized Water Rinses on Silicon Surface Cleaning K. D. Beyer, R. H. Kastl Journal of The Electrochemical Society Self-cleaning SurfaceChemical EngineeringWafer Scale ProcessingEngineeringEnvironmental Engineering	1982	10

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