Distribution of irradiation damage in silicon bombarded with hydrogen

Abstract

Damage distribution in [001] silicon crystals bombarded with a fluence of ${10}^{16}$/${\mathrm{cm}}^{2}$ to ${10}^{17}$${\mathrm{cm}}^{2}$ ${\mathrm{H}}^{+}$ ions at 50-250 keV and at implantation temperatures from -170 to 600\ifmmode^\circ\else\textdegree\fi{}C was measured by use of high-energy $^{4}\mathrm{He}^{+}$ channeling. The depth profiles were verified by spreading-resistivity measurements, by radiation-enhanced diffusion measurements, and by sectioning of a sample on which blisters had formed. The hydrogen profile, measured by $^{15}\mathrm{N}(p,\ensuremath{\alpha}\ensuremath{\gamma})^{12}\mathrm{C}$ reaction, agrees with the damage distribution. For 200 keV the depth measurements agree with values calculated by theoretical methods, and the depth distribution is 30%-60% narrower.