B. J. Masters - Concepedia

Author

B. J. Masters

IBM (United States)

Also Known As

B. J. MASTERS, B. J. Masters, B. Masters, B.J. Masters, BERNIE MASTERS

Publications

Citations

H-Index

Concepts

All Affiliations

IBM (United States)

About

B. J. Masters is an author at IBM (United States) specializing in engineering, physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	18	905
2	Applied Physics	11	11	746
3	Natural Sciences	3	3	205
4	Arts	1	1	13
5	Medicine	1	1	61

B. J. Masters

Publications

983

Citations

H-Index

Page 1

	Year	Citations
Self-Diffusion in Intrinsic and Extrinsic Silicon J. M. Fairfield, B. J. Masters Journal of Applied Physics SemiconductorsSemiconductor TechnologySilicon Self-diffusion CoefficientsEngineeringCrystalline Defects	1967	191
Channeling in low energy boron ion implantation A. E. Michel, R. H. Kastl, Sebastian Mäder, Applied Physics Letters Tilt AngleIon ImplantationEngineeringCrystalline DefectsPhysics	1984	95
Arsenic Isoconcentration Diffusion Studies in Silicon B. J. Masters, J. M. Fairfield Journal of Applied Physics SemiconductorsEngineeringDiffusion ResistanceCrystalline DefectsPhysics	1969	86
Distribution of irradiation damage in silicon bombarded with hydrogen W. K. Chu, R. H. Kastl, R. F. Lever, Physical review. B, Solid state Depth MeasurementsIon ImplantationEngineeringNuclear PhysicsCrystalline Defects	1977	78
SILICON SELF-DIFFUSION B. J. Masters, J. M. Fairfield Applied Physics Letters	1966	78
Phosphorus Isoconcentration Diffusion Studies in Silicon J. S. Makris, B. J. Masters Journal of The Electrochemical Society Materials ScienceEngineeringDiffusion ResistancePhysicsApplied Physics	1973	74
Proton-enhanced diffusion and vacancy migration in silicon B. J. Masters, E. F. Gorey Journal of Applied Physics Materials ScienceIon ImplantationPhosphorus ProfilesEngineeringCrystalline Defects	1978	70
The Hydrogen Peroxide-induced Ce<sup>*</sup>(III)-Ce(IV) Exchange System<sup>1</sup> Paul B. Sigler, B. J. Masters Journal of the American Chemical Society Inorganic ChemistryChemical EngineeringEngineeringChemical AnalysisB. J. Masterscite	1957	61
Semivacancy pair in crystalline silicon B. J. Masters Solid State Communications Crystalline SiliconEngineeringPhysicsApplied PhysicsCondensed Matter Physics	1971	46
Boron atom distributions in ion-implanted silicon by the (<i>n</i>,4He) nuclear reaction J. F. Ziegler, B. L. Crowder, G.W. Cole, Applied Physics Letters Materials ScienceBoron Atom DistributionsEnhanced DiffusionIon ImplantationEngineering	1972	41

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