Arsenic Isoconcentration Diffusion Studies in Silicon

Abstract

Arsenic radiotracer diffusions have been performed both in intrinsic and in homogeneously doped extrinsic silicon single crystals. Under intrinsic conditions, the tracer diffusion coefficient may be represented by the expression Di=60 exp (−4.20 eV/kT) cm2/sec. Measured in extrinsic silicon, in the absence of a concentration gradient, the tracer diffusion coefficient conforms with the relationship D=Di(n/ni), in which (n/ni) in the ratio of the free electron concentration in the extrinsic sample to that of intrinsic silicon at the diffusion temperature.