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Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

Electrical EngineeringChip SizeEngineeringSolid-state LightingNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorN-type Contact Design