J. E. Epler

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Jonathan J. Wierer, Michael R. Krames, J. E. Epler et al. · Applied Physics Letters · 2004 · 377 citations

Semiconductors, Photonics, Electrical Engineering +15

High performance thin-film flip-chip InGaN–GaN light-emitting diodes

O.B. Shchekin, J. E. Epler, T. A. Trottier et al. · Applied Physics Letters · 2006 · 333 citations

White Oled, Electrical Engineering, Electronic Devices +15

Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in Al<i>x</i>Ga1−<i>x</i> As-GaAs quantum-well heterostructures

L. J. Guido, N. Holonyak, K. C. Hsieh et al. · Journal of Applied Physics · 1987 · 150 citations

Semiconductors, Materials Science, Aluminium Nitride +14

Room-temperature continuous operation of <i>p</i>-<i>n</i> Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum well heterostructure lasers grown on Si

D.G. Deppe, N. Holonyak, D. W. Nam et al. · Applied Physics Letters · 1987 · 85 citations

Semiconductors, Photonics, Semiconductor Technology +15

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Lei Zhou, J. E. Epler, Michael R. Krames et al. · Applied Physics Letters · 2006 · 61 citations

Materials Science, Photonics, Electrical Engineering +15