Applied Physics Letters · 2006 · 61 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesThin FilmsLight-emitting DiodesQuantum Well DevicesQuantum WellsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEtchingGallium NitrideGallium Nitride Light-emitting DiodesLight ExtractionLight-emitting DevicesQuantum Well Light-emitting DiodesQuantum Well StructuresUltraviolet Light-emitting Diodes
Vertically injected thin-film ultraviolet light-emitting diodes operating at 325 and 280nm are demonstrated. Low-temperature AlN interlayers allow crack-free growth of AlxGa1−xN with compositions up to x=0.53 on GaN-on-sapphire templates. The GaN layer allows laser-induced separation of the highly strained epi stack from the sapphire substrate with high yield. Cathode contacts are formed on nitrogen-face AlxGa1−xN (up to x=0.53) and allow vertical injection of current into the active region. Controlled roughening of the nitrogen-face AlxGa1−xN is also demonstrated through photoelectrochemical etching and results in >2.5× light extraction gain for 325 and 280nm devices.
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High performance thin-film flip-chip InGaN–GaN light-emitting diodes
O.B. Shchekin, J. E. Epler, T. A. Trottier et al. · Applied Physics Letters · 2006 · 335 citations