290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles

Kristina Davitt, Yoon‐Kyu Song, William R. Patterson, +5

Optics Express

Photonic SensorEngineeringAerosolized ParticlesChemistryCompact System +15

Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3<x<0.5)

Seong Ran Jeon, Zhengru Ren, G. Cui, +5

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringElectrical ProbesEngineering +10

Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition

Jie Su, G. Cui, M. Gherasimova, +9

Applied Physics Letters

EngineeringChemistryGroup Iii-nitride NanowiresMocvd ProcessNanoscale Chemistry +15

Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes

Lei Zhou, J. E. Epler, Michael R. Krames, +6

Applied Physics Letters

Materials SciencePhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Tensile Behavior of Free-Standing Gold Films

R.D. Emery, D.X. Lenshek, B. Behin, +2

MRS Proceedings

Materials ScienceEngineeringSevere Plastic DeformationMechanical BehaviorTensile Behavior +3

Ultraviolet light-emitting diodes operating in the 340nm wavelength range and application to time-resolved fluorescence spectroscopy

Hongbo Peng, Eleni Makarona, Y. He, +8

Applied Physics Letters

EngineeringTime-resolved Fluorescence SpectroscopyLuminescence PropertyUv Light-emitting DiodesPlanar Chip +17

Growth of AlGaN nanowires by metalorganic chemical vapor deposition

Jie Su, M. Gherasimova, G. Cui, +8

Applied Physics Letters

Materials ScienceAluminium NitrideChemical EngineeringAlgan NanowiresEngineering +11

Heteroepitaxial evolution of AlN on GaN Grown by metal-organic chemical vapor deposition

M. Gherasimova, G. Cui, Zhengru Ren, +5

Journal of Applied Physics

Materials ScienceMaterials EngineeringAluminium NitrideEpitaxial GrowthHeteroepitaxial Evolution +12

Electronic properties of arsenic-doped gallium nitride

L. J. Guido, P. Mitev, M. Gherasimova, +1

Applied Physics Letters

SemiconductorsArsine PrecursorsWide-bandgap SemiconductorEngineeringOptoelectronic Materials +12

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating

M. Gherasimova, R. Hull, M. C. Reuter, +1

Applied Physics Letters

EngineeringElectron-beam LithographyLow DoseMicroscopySilicon On Insulator +18