The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping technique

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.4K citations

Engineering, Electrical Engineering, Recombination +15

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

On the Surface States Associated with a Periodic Potential

W. Shockley · Physical Review · 1939 · 1.2K citations

Natural Sciences, Physics, Condensed Matter Physics +16

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 684 citations

Engineering, Electrical Engineering, Materials Science +17

Charge pumping in MOS devices

J.S. Brugler, P.G.A. Jespers · IEEE Transactions on Electron Devices · 1969 · 499 citations

Engineering, Electrical Engineering, Materials Science +17