Growth of high quality GaN layers with AlN buffer on Si(111) substrates

Ultraviolet and violet GaN light emitting diodes on silicon

Supratik Guha, N. A. Bojarczuk · Applied Physics Letters · 1998 · 290 citations

Engineering, Materials Engineering, Materials Science +17

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 273 citations

Engineering, Materials Engineering, Materials Science +13

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

Tetsuya Takeuchi, Hiroshi Amano, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1991 · 188 citations

Natural Sciences, Materials Engineering, Materials Science +16

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

Patrick Kung, A. Saxler, X. Zhang et al. · Applied Physics Letters · 1995 · 166 citations

Engineering, Materials Engineering, Materials Science +14