Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Ph. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, M. Dähne; Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy. Appl. Phys. Lett. 9 February 2009; 94 (6): 062104. https://doi.org/10.1063/1.3073741 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

References

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