Electron Holography Studies of the Charge on Dislocations in GaN

Abstract

Off-axis electron holography in a transmission electron microscope is used to examine the charge on threading edge dislocations in n-GaN (0001). It is shown that the crystal inner potential is reduced within 10 nm of the dislocation consistent with a negatively charged core. The results can be explained by a simple unscreened potential due to a core charge of about 4 x 10(7) electrons cm (-1). The origin of this charge is discussed. The application of the method to other types of dislocation is also considered.