Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micron

The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials

Carlo Jacoboni, L. Reggiani · Reviews of Modern Physics · 1983 · 2.3K citations

Engineering, Chemistry, Materials Science +17

High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern et al. · IEEE Electron Device Letters · 1988 · 169 citations

Engineering, Electrical Engineering, Microelectronics +14

Submicrometer MOSFET structure for minimizing hot-carrier generation

Eiji Takeda, Haruki Kume, T. Toyabe et al. · IEEE Transactions on Electron Devices · 1982 · 157 citations

Engineering, Electrical Engineering, Microelectronics +15

AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICES

R.K. Cook, Jeffrey Frey · COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering · 1982 · 98 citations

Engineering, Electrical Engineering, Microelectronics +16

Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET's

G. Shahidi, D.A. Antoniadis, Henry I. Smith · IEEE Electron Device Letters · 1988 · 61 citations

Engineering, Electrical Engineering, Microelectronics +10