Electrochemical and Solid-State Letters · 2010 · 27 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionIntegrated Circuit DesignIntegrated Circuit FabricationInterconnect TechnologySemiconductor Device MaterialsSemiconductor SurfacesChemical Vapor Deposition MaterialsInterface FormationMetal-semiconductor InterfacesNanoelectronic DevicesNanoelectronic InterconnectsSubstrate MaterialsTemperature Effects On DepositionX-ray Fluorescence Spectroscopy
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability.
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Liner materials for direct electrodeposition of Cu
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