Mask defect inspection using an extreme ultraviolet microscope

Abstract

A defect inspection technique on an extreme ultraviolet lithography mask is described. There are two kinds of defects, amplitude defects and phase defects due to the multilayer coating. The technique utilizes a microscope using the same 13.5 nm wavelength as the light used for exposure, and producing a magnified image of defects on a mask. Using this microscope, amplitude defects on practical masks and phase defects are observed. A phase defect was formed by a multilayer coated on a line pattern with a height of 5 nm and width of 90 nm on a glass substrate. Although the detected defect is made beforehand, it is detected by reflection of the light which penetrated inside of a multilayer. These results show that it is possible to detect the internal reflectivity distribution, without depending on surface perturbations.