Journal of Physics D Applied Physics · 1995 · 14 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsCrystallographyEpitaxial GrowthSemiconductor HeterostructuresX-ray CrystallographyX-ray Data AnalysisX-ray OpticsHeterostructuresLattice MismatchLattice Mismatch Effects
Some Ill-V heterostructures grown by selective area MOMBE and MOVPE were investigated by double-crystal diffractometry with high spatial resolution. The high spatial resolution was achieved using synchrotron radiation focused by one-dimensional Bragg-Fresnel X-ray optics to a line focus of 2 mu m width. The lattice mismatch close to growth/non-growth boundaries was investigated by performing rocking curve scans with micrometre step width across the lateral transition zones. The rocking curves reveal material variations at the boundaries in the range of 100 mu m for MOVPE to below 6 mu m for MOMBE.
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Selective growth of GaAs in the MOMBE and MOCVD systems
H. Heinecke, A. Brauers, F. Grafahrend et al. · Journal of Crystal Growth · 1986 · 130 citations
Submicrometer fluorescence microprobe based on Bragg-Fresnel optics
S. Kuznetsov, I. Snigireva, A. Snigirev et al. · Applied Physics Letters · 1994 · 52 citations
Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD
E. J. Thrush, J. P. Stagg, M.A. Gibbon et al. · Materials Science and Engineering B · 1993 · 46 citations