IEEE Transactions on Device and Materials Reliability · 2001 · 21 citations · 10 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationMemory DevicesMemory ModelingThreshold ModelingExperimental Results InterpretationFlash MemoryFlash Memory DevicesFlash Memory ReliabilityNand Flash MemoryThreshold VoltageThreshold Voltage ControlThreshold Voltage Modeling
This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection.
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Fowler-Nordheim Tunneling into Thermally Grown SiO2
M. Lenzlinger, E. H. Snow · Journal of Applied Physics · 1969 · 1.7K citations
Flash memory cells-an overview
Paolo Pavan, R. Bez, P. Olivo et al. · Proceedings of the IEEE · 1997 · 711 citations · Full text
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Avinoam Kolodny, S. T. K. Nieh, B. Eitan et al. · IEEE Transactions on Electron Devices · 1986 · 178 citations
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