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Erratic Erase In ETOX/sup TM/ Flash Memory Array
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1993
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Hardware SecurityErase BehaviorElectrical EngineeringNon-volatile MemoryEngineeringFlash MemoryApplied PhysicsComputer EngineeringMemoryErratic EraseMemory DeviceMemory DevicesErratic Erase BehaviorMicroelectronicsMemory Reliability
In this paper, we will report, for the first time, an erratic erase behavior of ETOX^TM flash memory array during cycling. We find that erase behavior of ETOX^TM flash array varies randomly from cycle to cycle in an unpredictable manner. Such an erratic erase is believed to be caused by hole trapping/detrapping in tunnel oxide.