In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain - Concepedia

Concepedia

Publication | Open Access

In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

DOI Full Paper Access

45

Citations

15

References

2010

Year

Xingui Zhang, Huaxin Guo, Xiao Gong, Qian Zhou, You-Ru Lin, Hau-Yu Lin, Chih-Hsin Ko, C. Wann, Yee‐Chia Yeo

Electrochemical and Solid-State Letters

Abstract

10.1149/1.3516213

References

	Year	Citations

Page 1