In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

Suman Datta, M. Doczy, Barry M. Doyle et al. · IEEE Transactions on Nanotechnology · 2005 · 639 citations

Device Modeling, Electrical Engineering, Electronic Devices +12

Benchmarking nanotechnology for high-performance and low power logic transistor applications

R. Chau · 2005 · 571 citations

Low-power Electronics, Electrical Engineering, Electronic Devices +15

Development of refractory ohmic contact materials for gallium arsenide compound semiconductors

Masanori Murakami · Science and Technology of Advanced Materials · 2002 · 262 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +16

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 170 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

T. D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Applied Physics Letters · 2008 · 126 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +8