Growth of Wurtzite GaN on (0 0 1) GaAs Substrates at Low Temperature by Atomic Layer Epitaxy

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 273 citations

Engineering, Materials Engineering, Materials Science +13

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

Engineering, Materials Engineering, Materials Science +17

MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

Kentaro Onabe, N. Ohkouchi, Hiroyuki Yaguchi et al. · Journal of Crystal Growth · 1992 · 143 citations

Engineering, Materials Engineering, Materials Science +12

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

S Miyoshi, Kentaro Onabe, N. Ohkouchi et al. · Sixth International Conference Metalorganic Vapor Phase Epitaxy · 2005 · 120 citations

Engineering, Materials Engineering, Materials Science +12

High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

Akito Kuramata, Kazuhiko Horino, K. Domen et al. · Applied Physics Letters · 1995 · 93 citations

Engineering, Materials Engineering, Materials Science +17