K. Domen

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Yuichiro Hanyu, K. Domen, Kenji Nomura et al. · Applied Physics Letters · 2013 · 137 citations

Engineering, Electrical Engineering, Materials Science +17

InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy

Akito Kuramata, K. Domen, Reiko Soejima et al. · Japanese Journal of Applied Physics · 1997 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial Growth of GaN on (1 0 0) β-Ga₂O₃ Substrates by Metalorganic Vapor Phase Epitaxy

Kiyoshi Shimamura, Encarnación G. Vı́llora, K. Domen et al. · Japanese Journal of Applied Physics · 2004 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

Akito Kuramata, Kazuhiko Horino, K. Domen et al. · Applied Physics Letters · 1995 · 93 citations

Engineering, Materials Engineering, Materials Science +17

Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy

Makoto Kondō, C. Anayama, Naoko Okada et al. · Journal of Applied Physics · 1994 · 78 citations

Engineering, Materials Engineering, Materials Science +17