C. Anayama

Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy

Makoto Kondō, C. Anayama, Naoko Okada et al. · Journal of Applied Physics · 1994 · 78 citations

Semiconductors, Materials Science, Crystallographic Orientation Dependence +14

High-purity GaSb epitaxial layers grown from Sb-rich solutions

C. Anayama, T. Tanahashi, H. Kuwatsuka et al. · Applied Physics Letters · 1990 · 54 citations

Materials Engineering, Materials Science, Optical Materials +13

Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy

Makoto Kondō, Naoko Okada, K. Domen et al. · Journal of Electronic Materials · 1994 · 52 citations

Materials Engineering, Nonradiative Recombination Centers, Materials Science +6

Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materials

Makoto Kondō, C. Anayama, Toshiyuki Tanahashi et al. · Journal of Crystal Growth · 1992 · 52 citations

Materials Science, Ii-vi Semiconductor, Engineering +6

Pyrolysis and Photolysis of Trimethylaluminum

Nobumasa Suzuki, C. Anayama, Kazuya Masu et al. · Japanese Journal of Applied Physics · 1986 · 49 citations

Chemical Engineering, Radical Emission, Engineering +14