Toshiyuki Tanahashi

InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy

Akito Kuramata, K. Domen, Reiko Soejima et al. · Japanese Journal of Applied Physics · 1997 · 124 citations

Engineering, Laser Science, Laser Applications +16

High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate

Akito Kuramata, Kazuhiko Horino, K. Domen et al. · Applied Physics Letters · 1995 · 93 citations

Materials Engineering, Materials Science, Cavity Mirror +11

Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy

Makoto Kondō, C. Anayama, Naoko Okada et al. · Journal of Applied Physics · 1994 · 78 citations

Semiconductors, Materials Science, Crystallographic Orientation Dependence +14

Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP

Kazuo Nakajima, Toshiyuki Tanahashi, Kenzo Akita et al. · Journal of Applied Physics · 1979 · 60 citations

Engineering, Crystal Growth Technology, Solidus Data +18

Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate

Akito Kuramata, S. Kubota, Reiko Soejima et al. · Japanese Journal of Applied Physics · 1998 · 53 citations

Optical Materials, Engineering, Laser Science +21