Toshiyuki Tanahashi - Concepedia

Author

Toshiyuki Tanahashi

Fujitsu (Japan)

Also Known As

Toshiyuki TANAHASHI, Toshiyuki Tanahashi, Toshiyuki Tanahashi Toshiyuki Tanahashi

Publications

846

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)

About

Toshiyuki Tanahashi is an author at Fujitsu (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	751
2	Applied Physics	15	17	739
3	Electrical Engineering	6	6	260
4	Chemical Engineering	1	1	12
5	Chemistry	1	1	60

Toshiyuki Tanahashi

Publications

784

Citations

H-Index

Page 1

	Year	Citations
InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy Akito Kuramata, K. Domen, Reiko Soejima, Japanese Journal of Applied Physics EngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic Devices	1997	124
High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl2O4 substrate Akito Kuramata, Kazuhiko Horino, K. Domen, Applied Physics Letters Materials EngineeringMaterials ScienceCavity MirrorSingle-crystal Gan LayerEngineering	1995	93
Crystallographic orientation dependence of impurity incorporation into III-V compound semiconductors grown by metalorganic vapor phase epitaxy Makoto Kondō, C. Anayama, Naoko Okada, Journal of Applied Physics SemiconductorsMaterials ScienceCrystallographic Orientation DependenceAdsorption SitesEngineering	1994	78
Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP Kazuo Nakajima, Toshiyuki Tanahashi, Kenzo Akita, Journal of Applied Physics EngineeringCrystal Growth TechnologySolidus DataChemistryQuantum Materials	1979	60
Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate Akito Kuramata, S. Kubota, Reiko Soejima, Japanese Journal of Applied Physics Optical MaterialsEngineeringLaser ScienceVertical Conducting StructureLaser Applications	1998	53
Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy Makoto Kondō, Naoko Okada, K. Domen, Journal of Electronic Materials Materials EngineeringNonradiative Recombination CentersMaterials ScienceAlgainp GrownEngineering	1994	52
Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materials Makoto Kondō, C. Anayama, Toshiyuki Tanahashi, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringCrystal Orientation DependenceMovpe-grown Iii–v Materials	1992	52
Dependence of carbon incorporation on crystallographic orientation during metalorganic vapor phase epitaxy of GaAs and AlGaAs Makoto Kondō, Toshiyuki Tanahashi Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsCarbon IncorporationCondensed Matter Physics	1994	46
Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes K. Domen, Reiko Soejima, Akito Kuramata, MRS Internet Journal of Nitride Semiconductor Research	1998	33
Liquid phase epitaxial growth of lattice-matched Al0.48In0.52As on InP Kazuo Nakajima, Toshiyuki Tanahashi, Kenzo Akita Applied Physics Letters Materials EngineeringMaterials ScienceAluminium NitrideEngineeringCrystalline Defects	1982	27

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