Composition dependence of the band gaps of In1−<i>x</i>Ga<i>x</i>As1−<i>y</i>P<i>y</i> quaternary solids lattice matched on InP substrates

Kazuo Nakajima, Akio Yamaguchi, Kenzo Akita, +1

Journal of Applied Physics

EngineeringCrystal Growth TechnologySolid-state ChemistryBand GapSemiconductors +16

Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates

Kazuo Nakajima, T. Kusunoki, Kenzo Akita, +1

Journal of The Electrochemical Society

Materials ScienceEngineeringLpe Growth ConditionsCrystal Growth TechnologyPhase Equilibrium +10

Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP

Kazuo Nakajima, Toshiyuki Tanahashi, Kenzo Akita, +1

Journal of Applied Physics

EngineeringCrystal Growth TechnologySolidus DataChemistryQuantum Materials +16

Observation of etch pits produced in InP by new etchants

Kenzo Akita, T. Kusunoki, Satoshi Komiya, +1

Journal of Crystal Growth

Chemical EngineeringEtch Pits

Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescence

M. Taneya, Yoshimasa Sugimoto, Kenzo Akita

Journal of Applied Physics

Optical MaterialsIon-beam-assisted Cl2EngineeringLaser ApplicationsLayer Thickness +14

Novel electron-beam lithography for <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> patterning of GaAs using an oxidized surface thin layer as a resist

M. Taneya, Yoshimasa Sugimoto, H. Hidaka, +1

Journal of Applied Physics

EngineeringElectron-beam LithographyOptoelectronic DevicesSemiconductorsBeam Lithography +17

Electron-Beam-Induced Cl₂ Etching of GaAs

M. Taneya, Yoshimasa Sugimoto, H. Hidaka, +1

Japanese Journal of Applied Physics

SemiconductorsElectrical EngineeringEngineeringGas Phase EtchingElectron-beam Lithography +11

LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP

Kazuo Nakajima, Satoshi Komiya, Kenzo Akita, +2

Journal of The Electrochemical Society

Materials ScienceSemiconductorsDiffraction PeakEngineeringDislocation Interaction +10

Misfit dislocation-free In1−<i>x</i>Ga<i>x</i>As1−<i>y</i>P<i>y</i>/InP heterostructure wafers grown by liquid phase epitaxy

Kazuo Nakajima, Susumu Yamazaki, Satoshi Komiya, +1

Journal of Applied Physics

EngineeringSevere Plastic DeformationSemiconductorsLayer ThicknessQuaternary Wafers +14

Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask

Yuji Hiratani, Yoshimasa Ohki, Yoshimasa Sugimoto, +3

Japanese Journal of Applied Physics

SemiconductorsMaterials ScienceElectrical EngineeringGaas Oxide SurfaceGaas Growth +9