Local vibrational modes as a probe of activation process in <i>p</i>-type GaN

Hisatomo Harima, Toshiaki Inoue, S. Nakashima, +2

Applied Physics Letters

Materials ScienceSemiconductor TechnologyWide-bandgap SemiconductorActivation ProcessEngineering +11

Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN

Takayuki Yuasa, Yoshihiro Ueta, Yuhzoh Tsuda, +3

Japanese Journal of Applied Physics

Optical MaterialsEngineeringSapphire SubstrateOptoelectronic DevicesChemical Engineering +14

Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescence

M. Taneya, Yoshimasa Sugimoto, Kenzo Akita

Journal of Applied Physics

Optical MaterialsIon-beam-assisted Cl2EngineeringLaser ApplicationsLayer Thickness +14

Novel electron-beam lithography for <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> patterning of GaAs using an oxidized surface thin layer as a resist

M. Taneya, Yoshimasa Sugimoto, H. Hidaka, +1

Journal of Applied Physics

EngineeringElectron-beam LithographyOptoelectronic DevicesSemiconductorsBeam Lithography +17

Electron-Beam-Induced Cl₂ Etching of GaAs

M. Taneya, Yoshimasa Sugimoto, H. Hidaka, +1

Japanese Journal of Applied Physics

SemiconductorsElectrical EngineeringEngineeringGas Phase EtchingElectron-beam Lithography +11

Optoelectronic integrated device with light amplification and optical bistability

Akio Sasaki, M. Taneya, Hiroshi Yano, +1

IEEE Transactions on Electron Devices

Optical MaterialsEngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductors +18

0° phase mode operation in phased-array laser diode with symmetrically branching waveguide

M. Taneya, Mitsuhiro Matsumoto, S. Matsui, +2

Applied Physics Letters

PhotonicsOptical MaterialsCw Threshold CurrentsEngineeringLaser Science +13

Electronic properties in <i>p</i>-type GaN studied by Raman scattering

Hisatomo Harima, Toshiaki Inoue, S. Nakashima, +2

Applied Physics Letters

SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorEngineeringPhysics +9

Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask

Yuji Hiratani, Yoshimasa Ohki, Yoshimasa Sugimoto, +3

Japanese Journal of Applied Physics

SemiconductorsMaterials ScienceElectrical EngineeringGaas Oxide SurfaceGaas Growth +9

Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching

Yoshimasa Sugimoto, M. Taneya, H. Hidaka, +1

Journal of Applied Physics

Optical MaterialsEngineeringInduced DamageLaser ApplicationsDamage Depth +17