Electron-Beam-Induced Cl₂ Etching of GaAs

Abstract

Electron-beam (EB)-induced Cl 2 etching of GaAs is performed for the first time. Etching occurs only in the area exposed to both the Cl 2 molecules and the EB. The etching rate is equal to that of a Cl 2 gas phase etching. The morphologies of the etched surfaces are slightly rough, but the photoluminescence intensity of the processed sample does not change as compared with that of the unprocessed sample. The etching characteristics predict that surface adsorbates act as a mask for a gas phase etching and that the EB plays an important part in patterning of the adsorbate mask.