Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materials

Mechanism of carbon incorporation in MOCVD GaAs

T. F. Kuech, E. Veuhoff · Journal of Crystal Growth · 1984 · 226 citations

Engineering, Materials Engineering, Materials Science +12

(AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition

Takashi Fukui, Hisao Saito · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 198 citations

Natural Sciences, Materials Science, Physics +17

Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates

Hiromitsu Asai · Journal of Crystal Growth · 1987 · 194 citations

Engineering, Materials Engineering, Materials Science +14

AlGaInP visible laser diodes grown on misoriented substrates

Hiroki Hamada, M. Shono, S. Honda et al. · IEEE Journal of Quantum Electronics · 1991 · 109 citations

Engineering, Materials Engineering, Materials Science +15

Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

R. Bhat, C. Caneau, Chung-En Zah et al. · Journal of Crystal Growth · 1991 · 95 citations

Engineering, Materials Engineering, Materials Science +17