Interstitial Doping
Interstitial Doping is a scholarly contribution in materials science wherein dopant atoms occupy interstitial sites within a host lattice, thereby altering the material's electronic or structural properties without substituting host atoms.
612
Publications
32.2K
Citations
2.8K
Authors
812
Institutions
Publications per year
2017–2026
180
Parents
612
1–5 of 612
2.8K
University of California, Santa Barbara, United States
8 publications · 1.2K citations
8
h-index
7
h-index
5
h-index
5
h-index
5
h-index
1–5 of 2.8K
812

Chinese Academy of Sciences
Beijing, China
19 h-index
86 publications
5K citations

Centre National de la Recherche Scientifique
Paris, France
11 h-index
33 publications
1.6K citations
University of Cambridge
Cambridge, United Kingdom
11 h-index
22 publications
1.4K citations
The University of Tokyo
Tokyo, Japan
10 h-index
29 publications
860 citations
Palo Alto Research Center
Palo Alto, United States
9 h-index
24 publications
2.8K citations
University College London
London, United Kingdom
9 h-index
17 publications
946 citations

Oak Ridge National Laboratory
Oak Ridge, United States
9 h-index
33 publications
1.6K citations
The University of Osaka
Osaka, Japan
9 h-index
26 publications
1.9K citations
1–8 of 812
55 publications · 2.1K citations
28
h-index
67 publications · 2.6K citations
25
h-index
23 publications · 1.8K citations
20
h-index
PRB · 20 publications · 1.6K citations
17
h-index
PRL · 15 publications · 1.6K citations
15
h-index
1–5