Interstitial Doping

Interstitial Doping is a scholarly contribution in materials science wherein dopant atoms occupy interstitial sites within a host lattice, thereby altering the material's electronic or structural properties without substituting host atoms.

612

Publications

32.2K

Citations

2.8K

Authors

812

Institutions

Publications per year

2017–2026

180

Parents

Authors

2.8K

  1. CG
    Chris G. Van de Walle

    University of California, Santa Barbara, United States

    8 publications · 1.2K citations

    8

    h-index

  2. JG
    J. G. Correia

    University of Lisbon, Portugal

    7 publications · 212 citations

    7

    h-index

  3. JW
    J. W. Mayer

    California Institute of Technology, United States

    5 publications · 266 citations

    5

    h-index

  4. GF
    G. F. Neumark

    Columbia University, United States

    5 publications · 479 citations

    5

    h-index

  5. AV
    A. Vantomme

    KU Leuven, Belgium

    5 publications · 83 citations

    5

    h-index

1–5 of 2.8K

Venues

  1. Journal of Applied Physics

    55 publications · 2.1K citations

    28

    h-index

  2. Applied Physics Letters

    67 publications · 2.6K citations

    25

    h-index

  3. The Journal of Physical Chemistry C

    23 publications · 1.8K citations

    20

    h-index

  4. Physical Review B

    PRB · 20 publications · 1.6K citations

    17

    h-index

  5. Physical Review Letters

    PRL · 15 publications · 1.6K citations

    15

    h-index

1–5