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Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringSemiconductor LasersOptoelectronic MaterialsApplied PhysicsOmcvd GrowthDh LasersSn DopingOptoelectronic DevicesMolecular Beam EpitaxyOptoelectronicsCompound Semiconductor