LDMOS modeling for analog and RF circuit design

Abstract

This paper presents a complete SPICE sub-circuit model for a lateral double diffused N-MOS (NLDMOS) in a 0.25 m BICMOS technology. The proposed model accurately simulates single and multifinger devices up to geometry sizes used in the final application. The model is validated in DC, AC and large signal conditions. It accounts for all basic LDMOS phenomena such as graded channel, quasi-saturation and self-heating effects. Such study demonstrates that this sub-circuit approach can compete with recent physically based published compact models and even surpass them in terms of flexibility and portability in numerous simulators.