H. Jaouen

Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Yann‐Michel Niquet, D. Rideau, C. Tavernier et al. · Physical Review B · 2009 · 173 citations · Full text

Natural Sciences, Materials Science, Physics +17

A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET

E.F. Fuchs, Philippe Dollfus, G. LeCarval et al. · IEEE Transactions on Electron Devices · 2005 · 46 citations

Engineering, Electrical Engineering, Microelectronics +16

Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation

C. Rivero, Patrice Gergaud, M. Gailhanou et al. · Applied Physics Letters · 2005 · 41 citations

Natural Sciences, Materials Engineering, Materials Science +17

LDMOS modeling for analog and RF circuit design

A. Canepari, G. Bertrand, Alexandre Giry et al. · 2005 · 27 citations

Engineering, Electrical Engineering, Analog Electronics +16

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

D. Rideau, M. Feraille, M. Michaillat et al. · Solid-State Electronics · 2009 · 25 citations

Engineering, Electrical Engineering, Microelectronics +13