Concepedia

LDMOSFET and SiGe:C HBT integrated in a 0.25μm BiCMOS technology for RF-PA applications

D. Muller, Alexandre Giry, C. Amaud, Christophe Arricastres, Raphaël Sommet, Bertrand Szelag, A. Monroy, Denis Pache

2004 · 13 citations · 4 references

Concepts

EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsRadio-frequency Integrated CircuitsBicmos TechnologyComplementary Metal-oxide-semiconductor DesignLarge-signal BehaviorRf Cmos DesignSige Bicmos Design

Abstract

An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.

References

4

High performance silicon LDMOS technology for 2 GHz RF power amplifier applications

Amber Wood, C. Dragon, W. Burger · 2002 · 81 citations

Engineering, Electrical Engineering, Microelectronics +16

BiCMOS7RF: a highly-manufacturable 0.25-/spl mu/m BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxy

Baudry, Szelag, Deleglise et al. · 2003 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16

Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology

Bertrand Szelag, H. Baudry, D. Muller et al. · 2004 · 13 citations

Engineering, Electrical Engineering, Microelectronics +14

Imagine the Future in Telecommunications Technology

D.L. Harame, Alvin Joseph, Douglas Coolbaugh et al. · 2002 · 11 citations

Engineering, Electrical Engineering, Microelectronics +16