2004 · 18 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsPower MosfetsSilicon Carbide (Sic) MaterialsSilicon Carbide Power Electronics
Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 m/spl Omega//spl middot/cm/sup 2/ is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.
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10 A, 2.4 kV Power DiMOSFETs in 4H-SiC
Sei‐Hyung Ryu, Anant Agarwal, Jim Richmond et al. · IEEE Electron Device Letters · 2002 · 54 citations
Development of 10 kV 4H-SiC Power DMOSFETs
Sei‐Hyung Ryu, Anant Agarwal, Sumi Krishnaswami et al. · Materials science forum · 2004 · 39 citations · Full text
High-voltage UMOSFETs in 4H SiC
I.A. Khan, James A. Cooper, M. A. Capano et al. · 2003 · 28 citations