Publication | Closed Access
Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process
25
Citations
27
References
2015
Year
Materials ScienceIi-vi SemiconductorGasb/gaas HeteroepitaxyEngineeringDislocation InteractionApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresAnion Exchange ProcessCompound SemiconductorInterfacial Misfit Dislocation
| Year | Citations | |
|---|---|---|
1998 | 549 | |
1994 | 471 | |
2009 | 274 | |
2006 | 257 | |
2001 | 236 | |
2009 | 98 | |
2005 | 90 | |
1996 | 60 | |
1997 | 60 | |
1994 | 52 |
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