L. Lassabatère - Concepedia

Author

L. Lassabatère

Centre National de la Recherche Scientifique

Also Known As

L Lassabatere, L Lassabatère, L. LASSABATERE, L. Lassabatere, L. Lassabatère, L. Lassabatére, Lassabatere, L., Louis Lassabatere

103

Publications

931

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université de Montpellier Institut d'Électronique et des Systèmes Centre d’Élaboration de Matériaux et d’Études Structurales Princeton University

About

L. Lassabatère is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	33	666
2	Applied Physics	14	30	601
3	Natural Sciences	2	2	26
4	Education	1	1	36
5	Health Sciences	1	1	10

L. Lassabatère

Publications

697

Citations

H-Index

Page 1

	Year	Citations
Structure, surface composition, and electronic properties of β-In2S3 and β-In2−xAlxS3 S. Belgacem, M. Amlouk, R. Bennaceur, Journal of Applied Physics EngineeringTheoretical Inorganic ChemistryElectronic PropertiesChemistryChemical Deposition	2001	91
Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001) J. M. Kang, M. Nouaoura, L. Lassabatère, Journal of Crystal Growth Materials ScienceMaterials EngineeringDifferent TemperaturesIi-vi SemiconductorEngineering	1994	52
Comparative studies between the growth characteristics of Bi2Te3 thin films deposited on SiO2, Si(100) and Si(111) M. Ferhat, B. Liautard, G. Brun, Journal of Crystal Growth Materials ScienceGrowth CharacteristicsEngineeringBi2te3 Thin FilmsCrystal Growth Technology	1996	43
The Kelvin probe method for work function topographies: technical problems and solutions J. Bonnet, L. Soonckindt, L. Lassabatère Vacuum Kelvin Probe MethodEngineeringDifferential Scanning CalorimetryMeasurementCalibration	1984	36
Fermi level pinning on (110) GaAs surfaces studied by CPD and SPV topographies J.M. Palau, E. Testemale, L. Lassabatère Journal of Vacuum Science and Technology EngineeringSpv TopographiesPhotovoltaicsSemiconductor DeviceFermi Level Pinning	1981	32
The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloys L. Soonckindt, D. Étienne, J.P. Marchand, Surface Science Materials ScienceMaterials EngineeringIi-vi SemiconductorZnsxse1−x AlloysEngineering	1979	25
GaSb/GaAs heteroepitaxy characterized as a stress-free system C. Raisin, A. Rocher, G. Landa, Applied Surface Science Electrical EngineeringGasb/gaas HeteroepitaxyEngineeringApplied PhysicsCondensed Matter Physics	1991	22
Fermi level pinning by interface states: A calculation of the height and the shape of the Schottky barrier J.M. Palau, Abu Bakar Md. Ismail, L. Lassabatère Solid-State Electronics Materials ScienceEngineeringPhysicsInterface StatesMany-body Quantum Physic	1985	19
Optical investigations of a GaSb-AlSb single quantum well C. Raisin, L. Lassabatère, C.H. Allibert, Solid State Communications Quantum SciencePhotonicsQuantum PhotonicsEngineeringPhysics	1987	19
Work function measurements during growth of ultra thin films of SiO2 on characterized silicon surfaces C. Raisin, E. Vieujot-Testemale, A. Ben Brahim, Solid-State Electronics Materials ScienceWork Function MeasurementsEngineeringNanoelectronicsSurface Science	1984	18

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