T. Yonehara

Epitaxial layer transfer by bond and etch back of porous Si

T. Yonehara, Kiyofumi Sakaguchi, Nobuhiko Sato · Applied Physics Letters · 1994 · 228 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Ammar Nayfeh, Chi On Chui, Krishna C. Saraswat et al. · Applied Physics Letters · 2004 · 162 citations · Full text

Engineering, Silicon On Insulator, Semiconductor Nanostructures +16

Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

Ammar Nayfeh, Chi On Chui, T. Yonehara et al. · IEEE Electron Device Letters · 2005 · 90 citations

Materials Science, Electrical Engineering, Ge-si Interface +11

Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor deposition

Jing Sheng, Hiroshi Kawarada, T. Yonehara et al. · Applied Physics Letters · 1989 · 82 citations

Materials Science, Diamond-like Carbon, Chemical Engineering +15

Hydrogen annealed silicon-on-insulator

Nobuhiko Sato, T. Yonehara · Applied Physics Letters · 1994 · 72 citations

Materials Engineering, Materials Science, Electrical Engineering +14