R. H. Miles

Atomic antimony for molecular beam epitaxy of high quality III–V semiconductor alloys

P. D. Brewer, D. H. Chow, R. H. Miles · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 60 citations

Materials Science, Semiconductors, Materials Engineering +15

Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)

Edward T. Yu, E. T. Croke, D. H. Chow et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 38 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +15

InAs/Ga1−<i>x</i>In<i>x</i>Sb strained-layer superlattices grown by molecular-beam epitaxy

D. H. Chow, R. H. Miles, J. R. Söderström et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 28 citations · Full text

Semiconductors, Materials Science, Wide-bandgap Semiconductor +14

Recombination lifetime in InAs–Ga1−<i>x</i>In<i>x</i>Sb superlattices

E. R. Youngdale, J. R. Meyer, C. A. Hoffman et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 14 citations

Photonics, Auger Coefficients, Optical Materials +15