Interface Roughness Scattering
Interface Roughness Scattering is a scattering mechanism in semiconductor heterostructures where carrier transport is perturbed by structural imperfections at the interfaces between different material layers, arising from atomic-scale deviations in the idealized boundary morphology that modulate the confinement potential in quantum wells.
282
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14.2K
Citations
997
Authors
314
Institutions
Publications per year
2017–2026
31
282
Interface roughness scattering in GaAs/AlAs quantum wells
H. Sakaki, Takeshi Noda, Kazuhiko Hirakawa et al. · Applied Physics Letters · 1987 · 680 citations
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The University of Tokyo
Tokyo, Japan
15 h-index
55 publications
6.5K citations

Chinese Academy of Sciences
Beijing, China
10 h-index
48 publications
1.3K citations

Centre National de la Recherche Scientifique
Paris, France
10 h-index
20 publications
526 citations
University of California, Santa Barbara
Santa Barbara, United States
8 h-index
35 publications
6.6K citations

University of Essex
Colchester, United Kingdom
6 h-index
9 publications
764 citations
Tokyo University of Science
Tokyo, Japan
6 h-index
18 publications
3.8K citations

Wright-Patterson Air Force Base
Wright-Patterson AFB, United States
6 h-index
10 publications
242 citations
Schott (Germany)
Mainz, Germany
5 h-index
13 publications
701 citations
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59 publications · 3.2K citations
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47 publications · 2.9K citations
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PRB · 26 publications · 1.2K citations
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15 publications · 678 citations
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12 publications · 2K citations
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