N. Balkan

The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

D. Zanato, Sibel Gökden, N. Balkan et al. · Semiconductor Science and Technology · 2004 · 174 citations

Wide-bandgap Semiconductor, Engineering, Low Temperature Mobility +17

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method

S.B. Lişesivdin, N. Balkan, M. Kasap et al. · Journal of Applied Physics · 2010 · 77 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Optical properties of GaNAs and GaInAsN quantum wells

Richard J. Potter, N. Balkan · Journal of Physics Condensed Matter · 2004 · 62 citations

Wide-bandgap Semiconductor, Phonon Energy, Photoluminescence +12

Hot electron cooling rates via the emission of LO-phonons in InN

D. Zanato, N. Balkan, B. K. Ridley et al. · Semiconductor Science and Technology · 2004 · 57 citations

Semiconductors, Semiconductor Technology, Electronic Devices +14

A.c. loss in sputtered hydrogenated amorphous germanium measurements at around liquid-nitrogen temperatures

A. R. Long, N. Balkan, W. R. Hogg et al. · Philosophical Magazine B · 1982 · 52 citations

Abstract Audio Frequency, Engineering, Thin Film Process Technology +17