Interconnect Reliability
Interconnect Reliability is a semiconductor reliability attribute that characterizes the ability of interconnect structures to maintain electrical and mechanical integrity under operational and environmental stresses over time.
947
Publications
35.4K
Citations
3.1K
Authors
512
Institutions
Publications per year
2017–2026
107
947
Stress evolution due to electromigration in confined metal lines
M. A. Korhonen, P. Bo rgesen, K. N. Tu et al. · Journal of Applied Physics · 1993 · 733 citations
Trends and challenges in VLSI circuit reliability
Cris S. Constantinescu · IEEE Micro · 2003 · 616 citations
Engineering, Computer Engineering, Electrical Engineering +17
1–5 of 947
3.1K
Massachusetts Institute of Technology, United States
30 publications · 1.4K citations
22
h-index
18
h-index
14
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14
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12
h-index
1–5 of 3.1K
512
IBM (United States)
Armonk, United States
25 h-index
242 publications
9.7K citations
Nanyang Technological University
Singapore, Singapore
22 h-index
86 publications
2.5K citations
Massachusetts Institute of Technology
Cambridge, United States
22 h-index
65 publications
3.1K citations
Texas Instruments (United States)
Dallas, United States
21 h-index
63 publications
2.1K citations
IMEC
Leuven, Belgium
20 h-index
283 publications
19.5K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
18 h-index
83 publications
5.6K citations
The University of Texas at Austin
Austin, United States
17 h-index
95 publications
4.8K citations
Advanced Micro Devices (United States)
Sunnyvale, United States
17 h-index
44 publications
1.6K citations
1–8 of 512
87 publications · 2.7K citations
28
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43 publications · 3.9K citations
25
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29 publications · 1.5K citations
19
h-index
24 publications · 1.4K citations
19
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JEM · 23 publications · 898 citations
17
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1–5