Interconnect Reliability

Interconnect Reliability is a semiconductor reliability attribute that characterizes the ability of interconnect structures to maintain electrical and mechanical integrity under operational and environmental stresses over time.

947

Publications

35.4K

Citations

3.1K

Authors

512

Institutions

Publications per year

2017–2026

107

Authors

3.1K

  1. CV
    Carl V. Thompson

    Massachusetts Institute of Technology, United States

    30 publications · 1.4K citations

    22

    h-index

  2. PS
    Paul S. Ho

    The University of Texas at Austin, United States

    27 publications · 1.5K citations

    18

    h-index

  3. KC
    Kristof Croes

    IMEC, Belgium

    19 publications · 561 citations

    14

    h-index

  4. CM
    Cher Ming Tan

    Nanyang Technological University, Singapore

    16 publications · 448 citations

    14

    h-index

  5. SX
    Sheldon X.-D. Tan

    University of California, Riverside, United States

    15 publications · 475 citations

    12

    h-index

1–5 of 3.1K

Venues

  1. Microelectronics Reliability

    87 publications · 2.7K citations

    28

    h-index

  2. Journal of Applied Physics

    43 publications · 3.9K citations

    25

    h-index

  3. IEEE Transactions on Electron Devices

    29 publications · 1.5K citations

    19

    h-index

  4. Applied Physics Letters

    24 publications · 1.4K citations

    19

    h-index

  5. Journal of Electronic Materials

    JEM · 23 publications · 898 citations

    17

    h-index

1–5