Concepedia

Electromigration-aware Layout

Electromigration-Aware Layout is a specialized integrated circuit physical design methodology that systematically incorporates current density limits and material transport effects into layout synthesis to mitigate time-dependent degradation caused by electromigration in very-large-scale integration systems.

88

Publications

2.4K

Citations

357

Authors

105

Institutions

Publications per year

2017–2026

11

Parents

Publications

88

Electromigration and its impact on physical design in future technologies

Jens Lienig · 2013 · 103 citations

, , +17

Electromigration in submicron interconnect features of integrated circuits

H. Ceric, S. Selberherr · Materials Science and Engineering R Reports · 2010 · 91 citations

, , +14

introduction to electromigration-aware physical design

Jens Lienig · 2006 · 89 citations

, , +17

Electromigration behavior of dual-damascene Cu interconnects––Structure, width, and length dependences

A. V. Vairagar, Subodh G. Mhaisalkar, Ahila Krishnamoorthy · Microelectronics Reliability · 2004 · 79 citations

, , +17

Electromigration performance of Through Silicon Via (TSV) – A modeling approach

Yung Chuen Tan, Cher Ming Tan, Xiaowu Zhang et al. · Microelectronics Reliability · 2010 · 73 citations

, , +16

1–5 of 88

Authors

357

  1. JL
    Jens Lienig

    Technische Universität Dresden, Germany

    12 publications · 447 citations

    11

    h-index

  2. NH
    Nuno Horta

    Instituto de Telecomunicações, Portugal

    5 publications · 134 citations

    5

    h-index

  3. RM
    Ricardo Martins

    Instituto de Telecomunicações, Portugal

    5 publications · 134 citations

    5

    h-index

  4. NL
    Nuno Lourenço

    Instituto de Telecomunicações, Portugal

    5 publications · 134 citations

    5

    h-index

  5. GJ
    Göran Jerke

    Robert Bosch (Germany), Germany

    4 publications · 87 citations

    4

    h-index

1–5 of 357

Institutions

105

  1. Technische Universität Dresden

    Dresden, Germany

    8 h-index

    11 publications

    463 citations

  2. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    7 h-index

    17 publications

    290 citations

  3. Robert Bosch (Germany)

    Stuttgart, Germany

    6 h-index

    10 publications

    236 citations

  4. Instituto de Telecomunicações

    Lisbon, Portugal

    4 h-index

    15 publications

    432 citations

  5. Instituto Superior Técnico

    Lisbon, Portugal

    4 h-index

    15 publications

    400 citations

  6. Texas Instruments (United States)

    Dallas, United States

    4 h-index

    11 publications

    169 citations

  7. Stanford University

    Stanford, United States

    3 h-index

    6 publications

    140 citations

  8. IMEC

    Leuven, Belgium

    3 h-index

    17 publications

    619 citations

1–8 of 105

Venues

  1. Microelectronics Reliability

    6 publications · 233 citations

    6

    h-index

  2. Thin Solid Films

    4 publications · 79 citations

    4

    h-index

  3. IEEE Transactions on Electron Devices

    3 publications · 36 citations

    3

    h-index

  4. Journal of Electronic Materials

    JEM · 2 publications · 24 citations

    2

    h-index

  5. Solid-State Electronics

    2 publications · 66 citations

    2

    h-index

1–5