Concepedia

Electromigration

Electromigration is a phenomenon in semiconductor reliability and interconnect technology wherein the gradual displacement of metal atoms in a conductor occurs due to the momentum transfer from migrating electrons under high current density, leading to the formation of voids and hillocks that degrade device performance over time.

2.2K

Publications

88.4K

Citations

5.1K

Authors

946

Institutions

Publications per year

2017–2026

246

Parents

Publications

2.2K

Electromigration—A brief survey and some recent results

J. R. Black · IEEE Transactions on Electron Devices · 1969 · 1.5K citations

, , +17

Electromigration in thin aluminum films on titanium nitride

I. A. Blech · Journal of Applied Physics · 1976 · 1.2K citations

, , +17

Recent advances on electromigration in very-large-scale-integration of interconnects

K. N. Tu · Journal of Applied Physics · 2003 · 1.1K citations

, , +17

Electromigration in metals

P Shing Ho, T Kwok · Reports on Progress in Physics · 1989 · 823 citations

, , +17

Stress evolution due to electromigration in confined metal lines

M. A. Korhonen, P. Bo rgesen, K. N. Tu et al. · Journal of Applied Physics · 1993 · 733 citations

, , +17

1–5 of 2.2K

Authors

5.1K

  1. CC
    Chih Chen

    National Yang Ming Chiao Tung University, Taiwan

    41 publications · 2.2K citations

    27

    h-index

  2. CV
    Carl V. Thompson

    Massachusetts Institute of Technology, United States

    43 publications · 1.9K citations

    26

    h-index

  3. PS
    Paul S. Ho

    The University of Texas at Austin, United States

    54 publications · 2.5K citations

    25

    h-index

  4. KN
    K. N. Tu

    University of California, Los Angeles, United States

    38 publications · 2.6K citations

    25

    h-index

  5. JR
    J. R. Lloyd

    IBM (United States), United States

    36 publications · 2.4K citations

    23

    h-index

1–5 of 5.1K

Institutions

946

  1. IBM (United States)

    Armonk, United States

    41 h-index

    497 publications

    18K citations

  2. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    41 h-index

    268 publications

    16.6K citations

  3. University of California, Los Angeles

    Los Angeles, United States

    32 h-index

    119 publications

    11.1K citations

  4. Stanford University

    Stanford, United States

    32 h-index

    116 publications

    5.2K citations

  5. Massachusetts Institute of Technology

    Cambridge, United States

    29 h-index

    113 publications

    6.6K citations

  6. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    28 h-index

    189 publications

    9K citations

  7. Texas Instruments (United States)

    Dallas, United States

    28 h-index

    128 publications

    5.5K citations

  8. Semiconductor Manufacturing International (Italy)

    Agrate Brianza, Italy

    26 h-index

    34 publications

    3.8K citations

1–8 of 946

Venues

  1. Journal of Applied Physics

    268 publications · 15.3K citations

    63

    h-index

  2. Applied Physics Letters

    179 publications · 9.7K citations

    57

    h-index

  3. Microelectronics Reliability

    69 publications · 2.7K citations

    28

    h-index

  4. IEEE Transactions on Electron Devices

    53 publications · 4.6K citations

    28

    h-index

  5. Journal of Electronic Materials

    JEM · 69 publications · 1.9K citations

    25

    h-index

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