Liang-Kai Han

Ultra-thin oxide reliability for ULSI applications

Ernest Y. Wu, J. H. Stathis, Liang-Kai Han · Semiconductor Science and Technology · 2000 · 146 citations

Engineering, Reliability Engineering, Nanoelectronics +16

Challenges for accurate reliability projections in the ultra-thin oxide regime

Ernest Y. Wu, W.W. Abadeer, Liang-Kai Han et al. · 2003 · 100 citations

Engineering, Reliability Engineering, Reliability Projection +18

Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides

Ernest Y. Wu, D. Harmon, Liang-Kai Han · IEEE Electron Device Letters · 2000 · 42 citations

Engineering, Natural Normalization Scheme, Temperature Dependence +17

The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

T.G. Ference, Jay Burnham, William F. Clark et al. · IEEE Transactions on Electron Devices · 1999 · 42 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics

Mohsin Ahmad Bhat, D. Wristers, Liang-Kai Han et al. · IEEE Transactions on Electron Devices · 1995 · 37 citations

Gate Dielectrics, Electrical Engineering, Semiconductor Device +10