Jay Burnham

The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

T.G. Ference, Jay Burnham, William F. Clark et al. · IEEE Transactions on Electron Devices · 1999 · 42 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Process stability of deuterium-annealed MOSFET's

William F. Clark, T.G. Ference, Terence B. Hook et al. · IEEE Electron Device Letters · 1999 · 34 citations

Spintronics, Electrical Engineering, Deuterium Concentration +11

Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon <i>p-i-n</i> solar cells: Characterization of microstructural evolution and optical gaps

Joohyun Koh, Yiwei Lu, Sangbo Kim et al. · Applied Physics Letters · 1995 · 33 citations

Optical Materials, Engineering, Spectroscopic Ellipsometry Measurements +20

Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution

Hiroyuki Fujiwara, Joohyun Koh, C. R. Wronski et al. · Applied Physics Letters · 1998 · 25 citations

Optical Materials, Engineering, Optical Depth Profiling +27

Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing

William F. Clark, T.G. Ference, S. Mittl et al. · IEEE Electron Device Letters · 1999 · 21 citations

Engineering, Barrier-nitride Processing, Hot-electron Reliability +17