Concepedia

T.G. Ference

TF

Statistics

Publications

6

Citations

235

H-Index

6

Active since

1988

Affiliations

IBM (United States)(Current)

T.G. Ference is an author at IBM (United States) specializing in materials science, semiconductor devices, and electronic materials.

Publications per year

1988–1999

6

Publications

6

Observation of a reversible grain boundary faceting transition induced by changes of composition

T.G. Ference, R. W. Balluffi · Scripta Metallurgica · 1988 · 114 citations

Natural Sciences, Materials Engineering, Materials Science +12

The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

T.G. Ference, Jay Burnham, William F. Clark et al. · IEEE Transactions on Electron Devices · 1999 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Process stability of deuterium-annealed MOSFET's

William F. Clark, T.G. Ference, Terence B. Hook et al. · IEEE Electron Device Letters · 1999 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing

William F. Clark, T.G. Ference, S. Mittl et al. · IEEE Electron Device Letters · 1999 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Processing thick multilevel polyimide films for 3-D stacked memory

Michael Caterer, T. Daubenspeck, T.G. Ference et al. · IEEE Transactions on Advanced Packaging · 1999 · 13 citations

Engineering, Materials Engineering, Materials Science +17

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