T.G. Ference

Observation of a reversible grain boundary faceting transition induced by changes of composition

T.G. Ference, R. W. Balluffi · Scripta Metallurgica · 1988 · 114 citations

Materials Science, Engineering, Physics +4

The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

T.G. Ference, Jay Burnham, William F. Clark et al. · IEEE Transactions on Electron Devices · 1999 · 42 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Process stability of deuterium-annealed MOSFET's

William F. Clark, T.G. Ference, Terence B. Hook et al. · IEEE Electron Device Letters · 1999 · 34 citations

Spintronics, Electrical Engineering, Deuterium Concentration +11

Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing

William F. Clark, T.G. Ference, S. Mittl et al. · IEEE Electron Device Letters · 1999 · 21 citations

Engineering, Barrier-nitride Processing, Hot-electron Reliability +17

Processing thick multilevel polyimide films for 3-D stacked memory

Michael Caterer, T. Daubenspeck, T.G. Ference et al. · IEEE Transactions on Advanced Packaging · 1999 · 13 citations

Engineering, Profile Modification, Wafer Scale Processing +17