IEEE Transactions on Electron Devices · 1999 · 42 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilityIii-v SemiconductorsIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor ReliabilityBarrier Layer FormationGate Oxide DegradationHot-carrier DegradationNitride PassivationNitride Thin FilmsReliability DegradationSilane TreatmentsSilicon Nitride
This paper describes the combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFETs. Devices subjected to a 60-min, 400/spl deg/C, 10% deuterium/90% nitrogen anneal after silicidization show a 32/spl times/ improvement in hot-electron lifetime. These same devices are then passivated with a deuterated barrier-nitride layer formed using deuterated ammonia (ND/sub 3/) and conventional silane (SiH/sub 4/). Further deuterium anneals along with conventional contact and metal-level processes are used to integrate the devices. Hot-electron stressing and SIMS analysis performed at various points in the processing give insight to methods of retaining the beneficial effects of deuterium during subsequent thermal processing.
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Process stability of deuterium-annealed MOSFET's
William F. Clark, T.G. Ference, Terence B. Hook et al. · IEEE Electron Device Letters · 1999 · 34 citations